technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com rf01015 rev a, october 2010 hi gh reliability product group page 1 of 5 devices MRT65KP48A thru mrt65kp75ca, e3 levels m, ma, mx, mxl features ? high reliability controlled devices with wafer fabrication and asse mbly lot traceability ? 100 % surge tested devices ? suppresses transients up to 65 kw @ 6.4/69 s ? fast response with less than 5ns turn-on time ? preferred 65 kw tvs for aircraft power bus protection ? optional upscreening available by replacing the m prefi x with ma, mx or mxl. these prefixes specify various screening and conformance inspection opti ons based on mil-prf-19500. refer to micronote 129 for more details on the screening options. ? moisture classification is level 1 with no dry pack required per ipc/jedec j -std- 020b ? rohs compliant devices available by adding e3 suffix ? 3 lot norm screening performed on standby current i d applications / benefits ? pin injection protection per rtca/do- 160f up to level 5 for waveform 4 (6.4/69 s) and up to level 3 for waveform 5a (40/120 s) at 70 o c ? compatible with abnormal surge voltage (dc) in 16.6.2.4 (catego ry a, b, and z) of rtca/do- 160f ? the MRT65KP48A is designed for category a in protecting 80 v compo nents ** ? the mrt65kp54a or 60a is designed for category b in protecting 90 v or 100 v components ** ? the mrt65kp75a is designed for category z in protecting 125 v comp onents ** ** including switching transistors, mosfets & igbts in offline switching power supplies maximum ratings ? peak pulse power dissipation at 25 c: 65 kw at @ 6.4/69 s per waveform in figure 8 (derate per figure 2) with impulse repetition rate (duty factor) of 0.0 1 % max ? operating and storage temperature: -5 5 c to +150 c ? steady-state power dissipation: 7 w @ tl = 25 c ? temperature coefficient of voltage: +0.100 %/ c max ? solder temperatures: 260 c for 10 s (maximum) case 5a 65 kw transient voltage suppressor - high reliability controlled devices - thru hole mounting - unidirectional (a) and bidirectional (ca) construction - selections for 48 v to 75 v standoff voltages (v wm ) downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ _____________________________ rf01015 rev a, october 2010 hi gh reliability product group page 2 of 5 mechanical and packaging ? void-free transfer molded thermosetting epoxy body meeting ul94v -0 requirements ? tin-lead (90 % sn, 10 % pb) or rohs (100% sn) compliant annealed ma tte-tin plating readily solderable per mil- std-750, method 2026 ? body marked with part number ? cathode indicated by band. no cathode band on bi-directional de vic es ? available in bulk or custom tape- and -reel packaging ? tape-and-reel standard per eia- 296 (add tr suffix to part number) ? weight: 1.6 grams (approximate) package dimensions case 5a symbols & definitions symbol definition symbol definition v wm working peak (standoff) voltage i pp peak pulse current p pp peak pulse power v c clamping voltage v br breakdown voltage i br breakdown current for v br i d standby current note: cathode indicated by band all dimensions in inches millimeters downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ _____________________________ rf01015 rev a, october 2010 hi gh reliability product group page 3 of 5 electrical characteristics @ 25 o c microsemi part number (replace a suffix with ca for bidirectional) working standoff voltage v wm maximum standby current i d @ v wm minimum breakdown voltage v br @ i br breakdown current i br maximum clamping voltage v c @ i pp (note 1) peak pulse current i pp @ 6.4/69 s (note 2) v max a v ma v a MRT65KP48A 48 5 53.3 5 77.7 836 mrt65kp54a 54 5 60.0 5 87.5 742 mrt65kp60a 60 5 66.7 5 97.3 668 mrt65kp75a 75 5 83.3 5 122 533 graphs tp C pulse time C sec. figure 1 peak pulse power vs. pulse time to 50% of exponentially decaying pulse t l lead temperature o c figure 2 power derating note: this p pp versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in app note 104 on microsemis website. aircraft transients are described with exponential decaying waveforms. for suppression of square-wave impulses, derate power and current to 66% of that for exponential decay as shown in figure 1. p pp peak pulse power vs. pulse time C kw non-repetitive pulse peak pulse power ( p pp ) or continuous power in % of 25 o c rating downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ _____________________________ rf01015 rev a, october 2010 hi gh reliability product group page 4 of 5 graphs contd. correct wrong figure 3 figure 5 figure 4 figure 6 t C time t C time t C time note: frequency is 1mhz figure 7 C waveform 3 figure 8 C waveform 4 figure 9 C waveform 5a note: the 1mhz damped oscillatory waveform (3) has an eff ective pulse width of 4 s. equivalent peak pulse power at each of the pulse widths represented in rtca/do-160e for wavefor ms 3, 4 and 5a (above) have been determined referencing figure 1 herein as well as application notes 104 and 120 (found on microsemis website) and are liste d below. installation tvs devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. minimizing the shunt path of the lead inductance and their v= - ldi/dt effects will optimize the tvs effectiveness. examples of optimum installation and poor installation are illustrated in figures 3 through figure 6. figure 3 illustrates minimal parasitic inductance with attachment at end of device. inductive voltage drop is across input leads. virtually no overshoot voltage results as illustrated with figure 4. the loss of effectiveness in protection caused by excessive parasitic inductance is illustrated in figures 5 and 6. also see micronote 111 for further information on parasitic lead inductance in tvs. downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ _____________________________ rf01015 rev a, october 2010 hi gh reliability product group page 5 of 5 graphs contd. waveform number pulse width ( s) peak pulse power (kw ) 3 4 290 4 6.4/69 65 5a 40/120 49 note: high current fast rise-time transients of 250 ns or less can more than triple the v c from parasitic inductance effects (v= - ldi/dt) compared to the clamping voltage shown in the electr ical characteristics as also described in figures 5 and 6 herein. downloaded from: http:///
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